CD Skripsi
Pembuatan Dan Karakterisasi Lapisan Tipis Bahan Feroelektrik Dengan Menggunakan Metode Sol Gel
Thin film shaped dielectric material is applied to the transducer, switches, sensors, capasitors, and memory with the advantage that memory is easy to modify and is permanent. Thin film (0,7)BaTiO3-(0,3)BaZr0,5Ti0,5O3 (BT-BZT) is made as dielectric material transducer, multilayer ceramic capacitor (MLCC). The study uses the sol gel method on FTO substrate, then annealed at 700ºC, 750ºC, and 800ºC. the research uses caracterization X-Ray Diffraction (XRD) Ultaviolet Visible (UV-Vis), Field Emmision Dispersif Microscopy-Energy Dispersive X-Ray (FESEM-EDX), and Impedance Spectroscopy. The peak in X-Ray Diffraction indicate the sampel has a tetragonal structure with crytal size 41,094 nm, 54,701 nm, and 65,691. The band gap energy value obtained is 2,558 eV, 2,557 eV, and 2,556 eV. The morphology of the sample analyzed at magnification of 30.000 has an irregular spherical shape with grain size 223,68 54,06 nm, 270,33 59,39 nm, and 317,03 64,11 nm. The sample capasitance value at a frequency of 1 MHz is 3,13 x 10-11, 3,14 x 10-11, 3,15 x 10-11, the value of the dielectric constans of the sample at a frequency of 1 MHz is 3542,893, 3554,516, dan 3647,343, the dielectric loss value of the sample at frequency of 1 MHz is 0,052, 0,057, 0,089. The highest capacitance value, dielectric constant, and dielectric loss at a frequency of 1 MHz at a temperature of 800, the dielectric value obtained shows that the samples is suitable for uses as a dielectric material for MLCC
Keywords : Thin film BT-BZT ; Sol Gel Method ; Annealing Temperature ; Dielectric ; Capacitance
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