CD Tesis
Pengaruh Waktu Tahan Terhadap Sifat Struktur Optik Lapisan Tipis Bazr0.5Ti0.5O3 Menggunakan Metode Sol-Gel
Ferroelectric is an electronic material especially dielectric, which polarizes
spontaneously and has the ability to change the direction of its internal electricity.
Applications of ferroelectric films use the dielectric, pyroelectric and electrooptic
properties characteristic of ferroelectric materials. Some of the most important
electronic applications of ferroelectric film include: non-volatile memory which
uses high polarizability, thin-film capacitors that utilize dielectric properties,
pyroelectric sensors use changes in the dielectric constant due to temperature,
FRAM and piezoelectric actuators take advantage of the effect piezoelectric
composed perovskite. In this research, a thin layer of Barium Zirconium Titanate
was grown with the composition Ba(Zr0.5Ti0.5)O3 using the sol-gel method. This
method was chosen because it can control the stoichiometry of the coating with
good quality, requires relatively low cost, the process is not too complicated and
can be done at curie temperature. Ba(Zr0.5Ti0.5)O3 is expected to obtain a better
crystalline level and a larger grain size. The grain size is expected to be denser,
homegene and large in size so that this level of crystallization will later affect the
electrical properties, especially the ferroelectric properties and the quality of the
thin films. This research was carried out annealing process at 700 °C with
variation of holding time 30 minutes, 1 hour, 1 hour 30 minutes and 2 hours in
order to get a good level of homogenity, the better the crystallinity level and the
gap energy applied in the form of sensors. Furthermore, the characterization test
will be carried out including using X-Ray Diffraction (XRD) equipment,
Ultaviolet Visible (UV-Vis) Spectroscopy.
Keywords: Thin films BZT, Holding time, Crystal structure crystal, Indeks miller,
Gap energy
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