CD Skripsi
Fabrikasi Dan Karakterisasi Lapisan Tipis Bahan Feroelektrik (0,4)Batio3-(0,6)Bazr0,5ti0,5o3 Menggunakan Metode Sol-Gel
Ferroelectric materials, such as Barium Zirconium Titanate (BT-BZT), exhibit spontaneous polarization and the ability to reverse their internal electric field direction, rendering them highly promising for electronic applications, including capacitors, sensors, and actuators. With high permittivity, tunability, and low dielectric loss, BT-BZT is an ideal candidate for capacitor applications, particularly in the development of efficient and effective Multilayer Ceramic Capacitors (MLCC). This research presents the synthesis and characterization of Barium Zirconium Titanate (BT-BZT) thin films with a composition of (0.4)BaTiO3–(0,6)BaZr0,5Ti0,5O3 deposited on Fluorine Tin Oxide (FTO) substrates via the Sol-Gel method. The BT-BZT thin films were annealed at temperatures of 700°C, 750°C, and 800°C and characterized using UV-Vis spectroscopy, XRD, FESEM-EDX, and Impedance Spectroscopy. The optical absorption peaks of the BT-BZT700, BT-BZT750, and BT-BZT800 samples were observed at wavelengths of 312 nm, 306 nm, and 311 nm, respectively. The energy band gap values of the samples were 4.04 eV, 4.03 eV, and 4.02 eV. XRD characterization revealed a tetragonal crystal structure, with crystallite sizes of 37.769 nm and 37.950 nm for the BT-BZT750 and BT-BZT800 samples, respectively. The BT-BZT700 sample did not exhibit any diffraction peaks. FESEM-EDX characterization showed that the thicknesses of the BT-BZT thin films annealed at 700°C, 750°C, and 800°C were 1130 nm, 1260 nm, and 1280 nm, respectively. The maximum capacitance value at a frequency of 100 Hz was stable at 0.0029 F for all samples, while the minimum capacitance value at a frequency of 1 MHz slightly increased at 800°C. The results of UV-Vis spectroscopy, XRD, FESEM-EDX, and Impedance Spectroscopy characterization indicate that the samples annealed at different temperatures can be used as MLCC capacitors.
Keywords: BT-BZT thin film; sol-gel method; energy bandgap; annealing temperature; capacitance properties; dielectric material
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