The ferroelectric material of Barium Zirconium Titanate has been successfully made into a thin films using the sol-gel method with annealing temperature variations. The BaZrxTi1-xO3 thin films was annealed for 1 hour and was held at a temperature of 600oC and 650oC at each composition variation. Characterization of the thin films was carried out using ultraviolet-visible spectroscopy and X…