CD Tesis
Karakterisasi White Dan 1/F Noise Pada Topologi Rangkaian Elektronik Current Mirror Berbasis Mosfet
Detection and monitoring of environmental pollution, especially water
pollution, need to be done regularly. Contaminated water was characterized by a
decrease in the concentration of dissolved oxygen (Dissolved Oxygen, DO), which
is detected using a biosensor. Living cell-based biosensors utilize cell metabolism,
which results in high impedance so that measurements at low currents with the
order of 1 A to 1 nA are required. Current mirror (CM) topology-based
biosensors can measure low currents without overloading the circuit, but
measurements at low currents are susceptible to noise generated from its
constituent components. This research identifies the type of noise that contributes
to a simple CM circuit consisting of a Metal Oxide Semiconductor Field Effect
Transistor (MOSFET) component and a resistor source of noise. Noise
identification is done by measuring the CM circuit's input and output using a PCI
6221 card with a 16-bit resolution and a sample rate of 250 Ksps. The noise
response is analyzed using the Fast Fourier Transform (FFT) function built in the
LabVIEW software to determine the type of dominant noise in the measurement
frequency spectrum. Initial calibration was carried out using resistance variations
ranging from 0 (AI short) to 1 G as the dummy input for the PCI 6221. Cell
metabolism as a source of white noise and 1/f noise was simulated using a
resistance variation of 1 k to 10 M on Rref and RL for each MOSFET
ALD1103, Si3399, and BS250. Meanwhile, the effect of ambient temperature on
the CM circuit was measured on the VT 6130P Heraeus Oven at 30C, 40C, and
50C.
The dominant noise calibration result is white noise, which has a
characteristic flat curve in the frequency range of 10 Hz to 100 kHz. White noise
on Rref and RL of the MOSFET type ALD1103 and BS250 produces the lowest
noise in the order 10-8 compared to the Si3399 type MOSFET. The 1/f noise level
at the output (RL) is greater than that at the input (Rref), with the largest increase
in noise coming from the Si3399 type MOSFET by 55% compared to the
ALD1103 and BS250 types, respectively at 5.5% and 5.6%. This is due to the
difference in transistor technology in the form of discrete and microchips and the
relatively large value of the leakage current, causing large mismatches.
Temperature treatment of each type of MOSFET shows instability at 1/f noise due
to differences in the design and component fabrication processes. Based on the
research results obtained, the MOSFET type ALD1103 and BS250 are the right
transistors to be applied to a biosensor system with a low noise level and a
combination of resistors according to measurement needs.
Key words: Biosensor, MOSFET, CM circuit, white and 1/f Noise, FFT function.
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