CD Tesis

Analisa Pengaruh Komposisi Dan Laju Suhu Annealing Material Ferroelektrik Bazrxti1-Xo3 (X=0,4 Dan 0,6) Sebagai Kapasitor

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Ferroelectric is one unique materials to be studied and investigated. This material is also applied as a device in electronics such as capacitors, because this material is a dielectric material that has spontaneous polarization and has the ability to change its internal polarization using an appropriate electric field. In this study to increase the capacitance and the dielectric constant values of the capacitor BaTiO3 was done by doping Zirconium (Zr) into the material with the formula BT BaZrxTi1-xO3 (x= 0.4 and x = 0.6). The suspension of Zr with a composition of x = 0.4 and 0.6, including the part of the ferroelectric relaxor. The thin layer of BZT was deposited on the FTO substrate by sol-gel method and annealed in a furnace with temperature of 800 ° C for 2 hours at a rate of 5°C/minute and 10°C/ minute. The rate of increase in annealing temperature affect the grain density in the sample. BZT samples were characterized using XRD, SEM and Impedance Spectroscopy. XRD characterization for x = 0.4, shows 4 peaks of X-Ray Diffraction. The diffraction peaks have the same planes but different angles of 2θ and the structure obtained is tetragonal. A tetragonal is a structure that shows the lattice parameter a=b but not the same as c . The difference in increasing of the annealing temperature shows the difference in the diffraction intensity where the intensity for the annealing temperature rate of 5°C/min is greater than 10°C/min. SEM characterization on samples for the annealed temperature of 800°C for 2 hours showed the presence of grains in the sample BaZr0.4Ti0.6O3 3 and BaZr0.6Ti0.4O3 . The magnification of SEM characterization used was 50,000 times. BZT material with a composition of x = 0.4 at a rate of increase in temperature of 5°C/min has a grain size of 0.48 μm and at T =10°C/min has a grain size of 0.37 μm while for x = 0.6 at a rate of 5°C/min has a grain size of 0.33 μm and at a rate of 10°C/min has a grain size of 0.18 μm. Characterization of Impedance Spectroscopy aims to determine electrical properties such as capacitance, dielectric constant and dielectric loss of BZT thin films and to see the relationship between the capacitance value to frequency, dielectric constant with frequency and dielectric loss with frequency. Capacitance, dielectric constant and dielectric loss at composition x = 0.4 have a greater value than composition x = 0.6. The capacitance, dielectric constant and dielectric loss at a temperature rise rate of 5°C/min have a greater value than the 10°C/min temperature rise rate. The capacitance value and the dielectric constant are inversely proportional to the frequency while the dielectric loss is directly proportional to the frequency. The equivalent circuit in each sample is type simplified Randles Cell and Rg value inversely proportional to the value of Cg.
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Keywords : BaZrxTi1-xO3, Ferroelectric, Temperature Rate, SEM, Impedance Spectroscopy, XRD

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Ketersediaan

Informasi Detail

Judul Seri

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No. Panggil

10 17. 221 (0002)

Penerbit

Pekanbaru : Universitas Riau – Pascasarjana – Tesis Fisika., 2021

Deskripsi Fisik

xvi, 56 hlm.: ill.: 29 cm

Bahasa

Indonesia

ISBN/ISSN

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Klasifikasi

10 17. 221 (0002)

Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

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Subjek

FISIKA

Info Detail Spesifik

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Pernyataan Tanggungjawab

FATAH

Versi lain/terkait

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