CD Skripsi

Pembuatan Dan Karakterisasi Lapisan Tipis Bazrxti1-Xo3 Dengan Menggunakan Variasi Suhu Annealing

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The ferroelectric material of Barium Zirconium Titanate has been successfully
made into a thin films using the sol-gel method with annealing temperature
variations. The BaZrxTi1-xO3 thin films was annealed for 1 hour and was held at
a temperature of 600oC and 650oC at each composition variation.
Characterization of the thin films was carried out using ultraviolet-visible
spectroscopy and X-ray diffraction (XRD). The optical energy band gap width of
the BaZr0,1Ti0,9O3 thin film at a temperature of 600ºC and 650ºC is 3.62 eV, 3.13
eV, respectively, for BaZr0,15Ti0.85O3 at 600ºC and 650ºC is 3.61 eV, 3.17 eV,
respectively and for BaZr0.2Ti0.8O3 at 600ºC and 650ºC is 3.69 eV, 3.35 eV,
respectively. The energy band gap values of all the thin films are obtained in the
range of 3.13-3.69 eV. These values indicated the semiconductor materials
because the ergonomics band gap is in the range of 1-6 eV. Based on the analysis
results of the BaZr0,15Ti0,85O3 sample 600ºC and 650ºC, it was found that
annealing temperature variations affected the crystal size. Data of lattice
parameters have value of a = b is 4.01 Å and for c is 4.05 Å. These results
showed that the structure of BZT crystal is tetragonal because the lattice
parameter has value of a=b c.
Keywords: BZT thin films, sol-gel method, optical characterization, energy band
gap, Crystal Structure

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Ketersediaan

Informasi Detail

Judul Seri

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No. Panggil

03 01.120 (0062)

Penerbit

Pekanbaru : Universitas Riau – FMIPA – FISIKA., 2020

Deskripsi Fisik

xvii, 58 hlm.: ill.: 29 cm

Bahasa

Indonesia

ISBN/ISSN

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Klasifikasi

03 01.120 (0062)

Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

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Subjek

FISIKA

Info Detail Spesifik

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Pernyataan Tanggungjawab

ELFITRA

Versi lain/terkait

Lampiran Berkas

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